HD64F7047FW40V Renesas Electronics America, HD64F7047FW40V Datasheet - Page 609
HD64F7047FW40V
Manufacturer Part Number
HD64F7047FW40V
Description
MCU 5V 256K I-TEMP,PB-FREE 100-Q
Manufacturer
Renesas Electronics America
Series
SuperH® SH7047r
Datasheet
1.HD64F7047F50V.pdf
(766 pages)
Specifications of HD64F7047FW40V
Core Processor
SH-2
Core Size
32-Bit
Speed
40MHz
Connectivity
CAN, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
53
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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19.8.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 19.10 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. An
5. For a dummy write to a verify address, write 1-byte data H'FF to the read address. Verify data
6. If the read data is not erased successfully, set erase mode again, and repeat the erase/erase-
19.8.3
All interrupts, including the NMI interrupt, are disabled while flash memory is being programmed
or erased, or while the boot program is executing, for the following three reasons:
1. An interrupt during programming/erasing may cause a violation of the programming or erasing
2. If an interrupt exception handling starts before the vector address is written or during
3. If an interrupt occurs during boot program execution, normal boot mode sequence cannot be
register 1 (EBR1) and the erase block register 2 (EBR2). To erase multiple blocks, each block
must be erased in turn.
overflow cycle of approximately 19.8 ms is allowed.
can be read in longwords from the address to which a dummy write was performed.
verify sequence as before. The number of repetitions of the erase/erase-verify sequence should
not exceed the maximum number of erasing (N).
algorithm, with the result that normal operation cannot be assured.
programming/erasing, a correct vector cannot be fetched and the CPU malfunctions.
carried out.
Erase/Erase-Verify Mode
Interrupt Handling when Programming/Erasing Flash Memory
Rev. 2.00, 09/04, page 567 of 720
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