HD6417712BPV Renesas Electronics America, HD6417712BPV Datasheet - Page 932

MPU 1.5/3.3V 0K PB-FREE 256-BGA

HD6417712BPV

Manufacturer Part Number
HD6417712BPV
Description
MPU 1.5/3.3V 0K PB-FREE 256-BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH Ethernetr
Datasheet

Specifications of HD6417712BPV

Core Processor
SH-3 DSP
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, Ethernet, FIFO, SCI, SIO
Peripherals
DMA, POR, WDT
Number Of I /o
24
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417712BPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 24 Electrical Characteristics
Rev. 1.00 Dec. 27, 2005 Page 888 of 932
REJ09B0269-0100
A12/A11 *
D31 to D0
A25 to A0
DACKn *
RD/WR
DQMxx
CKIO
RAS
CAS
CKE
Figure 24.35 Synchronous DRAM Burst Write Bus Cycle (Single Write × 4)
CSn
BS
1
2
Different Row Address, TRCD = 1 Cycle, TRWL = 1 Cycle)
(Bank Active Mode, PRE + ACTV + WRITE Commands,
t
t
t
t
t
t
Notes: 1. Address pin to be connected to A10 of SDRAM.
t
AD1
AD1
CSD1
RWD1
RASD1
DACD
DQMD1
Tp
2. DACKn is a waveform when active-low is specified.
t
t
t
RASD1
AD1
RWD1
Row address
Tpw
t
RASD1
Tr
t
t
t
t
t
t
t
RASD1
AD1
AD1
RWD1
CASD1
BSD
WDD2
Tc1
(High)
t
t
AD1
WDH2
Tc2
Column
address
Write command
t
AD1
Tc3
(1-4)
t
t
AD1
WDD2
Tc4
t
t
t
t
t
t
t
t
t
t
RWD1
AD1
AD1
RASD1
CASD1
WDH2
DACD
CSD1
BSD
DQMD1

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