ATSAM3U4CA-CU Atmel, ATSAM3U4CA-CU Datasheet - Page 329

• Manufacturer Part Number: ATSAM3U4CA-CU
• Description: IC MCU 32BIT 256KB FLSH 100TFBGA
• Manufacturer: Atmel
• Series: SAM3Ur

Specifications of ATSAM3U4CA-CU

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 96MHz
• Connectivity: EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 57
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 52K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 4x10b, 4x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TFBGA
• Processor Series: ATSAM3x
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 52 KB
• Interface Type: 3xUSART, TWI, 4xSPI, Bus
• Maximum Clock Frequency: 96 MHz
• Number Of Programmable I/os: 57
• Number Of Timers: 8
• Operating Supply Voltage: 1.62 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: ATSAM3U-EK
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

22.2.5.3
22.2.5.4
6430D–ATARM–25-Mar-11
Flash Full Erase Command
Flash Lock Commands
Table 22-7.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 22-8.
Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set
Lock command (SLB). With this command, several lock bits can be activated. A Bit Mask is pro-
vided as argument to the command. When bit 0 of the bit mask is set, then the first lock bit is
activated.
Likewise, the Clear Lock command (CLB) is used to clear lock bits.
Table 22-9.
Step
n+2
n+3
...
Step
1
2
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Handshake Sequence
Write handshaking
Write handshaking
Write Command (Continued)
Full Erase Command
Set and Clear Lock Bit Command
...
MODE[3:0]
DATA
DATA
MODE[3:0]
CMDE
DATA
MODE[3:0]
CMDE
DATA
DATA[15:0]
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
DATA[15:0]
SLB or CLB
Bit Mask
SAM3U Series
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