ATSAM3U4CA-CU Atmel, ATSAM3U4CA-CU Datasheet - Page 311

IC MCU 32BIT 256KB FLSH 100TFBGA

ATSAM3U4CA-CU

Manufacturer Part Number
ATSAM3U4CA-CU
Description
IC MCU 32BIT 256KB FLSH 100TFBGA
Manufacturer
Atmel
Series
SAM3Ur
Datasheets

Specifications of ATSAM3U4CA-CU

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
96MHz
Connectivity
EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
57
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
52K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b, 4x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TFBGA
Processor Series
ATSAM3x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
52 KB
Interface Type
3xUSART, TWI, 4xSPI, Bus
Maximum Clock Frequency
96 MHz
Number Of Programmable I/os
57
Number Of Timers
8
Operating Supply Voltage
1.62 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ATSAM3U-EK
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATSAM3U4CA-CU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATSAM3U4CA-CU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
21.3.3
6430D–ATARM–25-Mar-11
Flash Commands
The Enhanced Embedded Flash Controller (EEFC) offers a set of commands such as program-
ming the memory Flash, locking and unlocking lock regions, consecutive programming and
locking and full Flash erasing, etc.
Commands and read operations can be performed in parallel only on different memory planes.
Code can be fetched from one memory plane while a write or an erase operation is performed
on another.
Table 21-2.
In order to perform one of these commands, the Flash Command Register (EEFC_FCR) has to
be written with the correct command using the FCMD field . As soon as the EEFC_FCR register
is written, the FRDY flag and the FVALUE field in the EEFC_FRR register are automatically
cleared. Once the current command is achieved, then the FRDY flag is automatically set. If an
interrupt has been enabled by setting the FRDY bit in EEFC_FMR, the corresponding interrupt
line of the NVIC is activated. (Note that this is true for all commands except for the STUI Com-
mand. The FRDY flag is not set when the STUI command is achieved.)
All the commands are protected by the same keyword, which has to be written in the 8 highest
bits of the EEFC_FCR register.
Writing EEFC_FCR with data that does not contain the correct key and/or with an invalid com-
mand has no effect on the whole memory plane, but the FCMDE flag is set in the EEFC_FSR
register. This flag is automatically cleared by a read access to the EEFC_FSR register.
When the current command writes or erases a page in a locked region, the command has no
effect on the whole memory plane, but the FLOCKE flag is set in the EEFC_FSR register. This
flag is automatically cleared by a read access to the EEFC_FSR register.
Command
Get Flash Descriptor
Write page
Write page and lock
Erase page and write page
Erase page and write page then lock
Erase all
Set Lock Bit
Clear Lock Bit
Get Lock Bit
Set GPNVM Bit
Clear GPNVM Bit
Get GPNVM Bit
Start Read Unique Identifier
Stop Read Unique Identifier
Set of Commands
Value
0x2
0x4
0x5
0x8
0x0
0x1
0x3
0x9
0xA
0xB
0xC
0xD
0xE
0xF
Mnemonic
GETD
WP
WPL
EWP
EWPL
EA
SLB
CLB
GLB
SGPB
CGPB
GGPB
STUI
SPUI
SAM3U Series
311

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