ATSAM3U4CA-CU Atmel, ATSAM3U4CA-CU Datasheet - Page 327

IC MCU 32BIT 256KB FLSH 100TFBGA

ATSAM3U4CA-CU

Manufacturer Part Number
ATSAM3U4CA-CU
Description
IC MCU 32BIT 256KB FLSH 100TFBGA
Manufacturer
Atmel
Series
SAM3Ur
Datasheets

Specifications of ATSAM3U4CA-CU

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
96MHz
Connectivity
EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
57
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
52K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b, 4x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TFBGA
Processor Series
ATSAM3x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
52 KB
Interface Type
3xUSART, TWI, 4xSPI, Bus
Maximum Clock Frequency
96 MHz
Number Of Programmable I/os
57
Number Of Timers
8
Operating Supply Voltage
1.62 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ATSAM3U-EK
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATSAM3U4CA-CU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATSAM3U4CA-CU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Table 22-5.
22.2.5
6430D–ATARM–25-Mar-11
Step
1
2
3
4
5
6
7
8
9
10
11
12
13
Device Operations
Programmer Action
Sets MODE and DATA signals
Clears NCMD signal
Waits for RDY low
Sets DATA signal in tristate
Clears NOE signal
Waits for NVALID low
Reads value on DATA Bus
Sets NOE signal
Waits for NVALID high
Sets DATA in output mode
Sets NCMD signal
Waits for RDY high
Read Handshake
Figure 22-3.
Several commands on the Flash memory are available. These commands are summarized in
Table 22-3 on page
face running several read/write handshaking sequences.
When a new command is executed, the previous one is automatically achieved. Thus, chaining
a read command after a write automatically flushes the load buffer in the Flash.
MODE[3:0]
DATA[15:0]
NVALID
NCMD
Parallel Programming Timing, Read Sequence
NOE
RDY
325. Each command is driven by the programmer through the parallel inter-
1
Device Action
Waits for NCMD low
Latch MODE and DATA
Clears RDY signal
Waits for NOE Low
Sets DATA bus in output mode and outputs
the flash contents.
Clears NVALID signal
Waits for NOE high
Sets DATA bus in input mode
Sets NVALID signal
Waits for NCMD high
Sets RDY signal
2
Adress IN
ADDR
3
4
5
Z
6
7
Data OUT
8
9
SAM3U Series
Input
DATA I/O
Input
Input
Input
Input
Tristate
Output
Output
Output
Output
X
Input
Input
10
11
X
12
13
IN
327

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