DF38602RFT10 Renesas Electronics America, DF38602RFT10 Datasheet - Page 146

MCU 3V 16K 32-QFN

DF38602RFT10

Manufacturer Part Number
DF38602RFT10
Description
MCU 3V 16K 32-QFN
Manufacturer
Renesas Electronics America
Series
H8® H8/300H SLPr
Datasheet

Specifications of DF38602RFT10

Core Processor
H8/300H
Core Size
16-Bit
Speed
10MHz
Connectivity
I²C, IrDA, SCI, SSU
Peripherals
POR, PWM, WDT
Number Of I /o
13
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
32-QFN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F38602RFT10
HD64F38602RFT10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF38602RFT10V
Manufacturer:
Renesas Electronics America
Quantity:
135
Section 6 ROM
6.4.2
When erasing flash memory, the erasing/erasing-verifying flowchart shown in figure 6.4 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasure is performed in block units. Select a single block to be erased through erase block
3. The time during which the E bit is set to 1 is the flash memory erasing time.
4. The watchdog timer (WDT) is set to prevent the flash memory overerasing due to program
5. For writing dummy data to a verifying address, write one byte of data H'FF to an address
6. If the read data is not erased successfully, set erasing mode again, and repeat the
6.4.3
All interrupts including the NMI interrupt are disabled while flash memory is being programmed
or erased or while the boot program is executed for the following three reasons.
1. An interrupt during programming/erasure may cause a violation of the programming or erasing
2. If interrupt exception handling starts before programming the vector address or during
3. If an interrupt occurs during boot program execution, normal boot mode sequence cannot be
Rev. 3.00 May 15, 2007 Page 112 of 516
REJ09B0152-0300
register 1 (EBR1). To erase multiple blocks, each block must be erased in turn.
crush, etc. An overflow cycle of approximately 19.8 ms is adequate.
whose lower two bits are B'00. Verifying data can be read in longwords from the address to
which a dummy data is written.
erasing/erasing-verifying sequence as before. The maximum number of repetitions of the
erase/erase-verify sequence is 100.
algorithm, with the result that normal operation cannot be assured.
programming/erasure, a correct vector cannot be fetched and the CPU malfunctions.
carried out.
Erasing/Erasing-Verifying
Interrupt Handling when Programming/Erasing Flash Memory

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