BMSKTOPASA900(DCE) Toshiba, BMSKTOPASA900(DCE) Datasheet - Page 122
BMSKTOPASA900(DCE)
Manufacturer Part Number
BMSKTOPASA900(DCE)
Description
KIT STARTER TMPA900 USB JTAG
Manufacturer
Toshiba
Series
TOPASr
Type
MCUr
Specifications of BMSKTOPASA900(DCE)
Contents
Evaluation Board, Cable(s), Software and Documentation
For Use With/related Products
TMPA900CMXBG
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 122 of 959
- Download datasheet (5Mb)
[Description]
a. <Swidth[2:0]>
b. <DBSize[2:0]>
c.
d. <TransferSize>
Note:
Note: The burst size set in DBsize is unrelated to HBURST of the AHB bus.
Note: The burst size set in SBsize is unrelated to HBURST of the AHB bus.
• DMACCxControl (DMAC Channel x Control Register) (x = 0 to 7)
The transfer source bit width must be an integral multiple of the transfer destination bit
width.
Specifies the total number of transfers when the DMAC is operating as a flow controller.
The <TransferSize> value decrements with respect to each DMA transfer until it reaches 0.
On read, the number of transfers yet to be performed is read.
The total transfer count should be specified in units of the transfer source bit width.
<SBSize[2:0]>
The structure and explanation of these registers are same as DMACC0Control.
Please refer to the explanation of DMACC0Control.
For the name and addresse of these registers, please refer to Table 3.8.3.
Examples:
<Swidth>
8 bits
16 bits
32 bits
If the transfer source bit length is smaller than the transfer destination bit length, caution is required in
specifying the total transfer count. Make sure that the following equation is satisfied.
Transfer source bit length × Total transfer count = Transfer destination bit length × N
N: Integer
Transfer count unit
byte
half-word
word
TENTATIVE
TMPA900CM- 121
TMPA900CM
2009-10-14
Related parts for BMSKTOPASA900(DCE)
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: