sc9s12hy64j0vllr Freescale Semiconductor, Inc, sc9s12hy64j0vllr Datasheet - Page 738

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sc9s12hy64j0vllr

Manufacturer Part Number
sc9s12hy64j0vllr
Description
S12 Microcontrollers Mcu 16-bit Hcs12 Cisc 32kb Flash 5v Tray
Manufacturer
Freescale Semiconductor, Inc
Datasheet
Electrical Characteristics
1. Typical program and erase times are based on typical f
2. Maximum program and erase times are based on minimum f
3. t
4. Typical value for a new device
A.3.2
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
738
Num C
12a
12b
12d
12e
12c
10
11
1
2
3
5
6
8
9
cyc
= 1 / f
D Erase all blocks (mass erase) time
D Unsecure Flash time
D P-Flash block erase time
D P-Flash sector erase time
D P-Flash phrase programming time
D D-Flash sector erase time
D D-Flash erase verify (blank check) time
D D-Flash one word programming time
D D-Flash two word programming time
D D-Flash three word programming time
D D-Flash four word programming time
D D-Flash four word programming time crossing row
Bus frequency
Operating frequency
boundary
NVMBUS
NVM Reliability Parameters
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
Rating
Table A-16. NVM Timing Characteristics
NVMOP
NVMOP
and maximum f
and maximum f
Symbol
f
f
NVMBUS
t
t
t
t
t
t
NVMOP
t
dpgm4c
t
t
dcheck
dpgm1
dpgm2
dpgm3
dpgm4
pmass
t
t
mass
ppgm
t
pera
dera
uns
NVMBUS
Min
NVMBUS
0.8
1
Typ
100
100
100
226
100
170
241
311
328
5
1.0
20
(4)
(1)
Freescale Semiconductor
Max
2800
1.05
130
130
130
285
107
185
262
339
357
32
26
26
(2)
Unit
MHz
MHz
t
ms
ms
ms
ms
ms
cyc
s
s
s
s
s
s
(3)

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