MPC8544COMEDEV Freescale Semiconductor, MPC8544COMEDEV Datasheet - Page 684

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MPC8544COMEDEV

Manufacturer Part Number
MPC8544COMEDEV
Description
KIT DEV EXPRESS MPC8544COM
Manufacturer
Freescale Semiconductor
Type
MPUr
Datasheets

Specifications of MPC8544COMEDEV

Contents
Board
For Use With/related Products
MPC8544
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Local Bus Controller
14.4.4.3
RAM word fields specify the value of the various external signals at a granularity of up to four values for
each bus clock cycle. The signal timing generator causes external signals to behave according to timing
specified in the current RAM word. Each bit in the RAM word relating to LCSn and LBS timing specifies
the value of the corresponding external signal at each quarter phase of the bus clock.
The division of UPM bus cycles into phases is shown in
14.4.4.4
The RAM array for each UPM is 64 locations deep and 32 bits wide, as shown in
at the bottom of the figure are UPM outputs. The selected LCSn is for the bank that matches the current
address. The selected LBS is for the byte lanes read or written by the access.
14-64
9. Read/check MxMR[MAD]. If incremented, then the previous dummy read transaction is
10. Read MDR.
Clock Phases
T1, T2, T3, T4
completed; proceed to step 10. Repeat step 9 until incremented.
Current Bank
LCLK
T1
T2
T3
T4
MPC8544E PowerQUICC III Integrated Host Processor Family Reference Manual, Rev. 1
UPM Signal Timing
RAM Array
LCS[0:7]
CS Line
Selector
Figure 14-57. RAM Array and Signal Generation
LGPL0
Figure 14-56. UPM Clock Scheme
External Signals Timing Generator
LGPL1
RAM Array
LGPL2 LGPL3 LGPL4 LGPL5
32 Bits
Figure
14-56.
Byte Select
LBS[0:3]
64 Deep
Figure
Logic
BRn[PS], LA[30,31]
Freescale Semiconductor
14-57. The signals

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