HD64F2612FA20 Renesas Electronics America, HD64F2612FA20 Datasheet - Page 554

IC H8S MCU FLASH 128K 80QFP

HD64F2612FA20

Manufacturer Part Number
HD64F2612FA20
Description
IC H8S MCU FLASH 128K 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheets

Specifications of HD64F2612FA20

Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
43
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2612FA20
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HD64F2612FA20J
Manufacturer:
RENESAS/瑞萨
Quantity:
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Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
Rev. 7.00 Sep. 11, 2009 Page 518 of 566
REJ09B0211-0700
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (Shows the total period for which the E-bit FLMCR1 is set. It does not
4. To specify the maximum programming time value (tp (max.)) in the 128-bytes
5. For the maximum erase time (t
erase/erase-verify flowchart.
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
include the erase verification time.)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
[In additional programming]
Programming counter (n) = 1 to 6:
wait time after E bit setting (t
t
To set the maximum erase time, the values of (t
the above formula.
Examples: When t
E
(max.) = Wait time after E bit setting (t
When t
se
se
= 100 ms, N = 12 times
= 10 ms, N = 120 times
se
) and the maximum erase count (N):
E
(max.)), the following relationship applies between the
se
) x maximum erase count (N)
t
t
t
sp30
sp200
sp10
= 30 μs
= 10 μs
= 200 μs
se
) and (N) should be set so as to satisfy

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