HD64F2612FA20 Renesas Electronics America, HD64F2612FA20 Datasheet - Page 506

• Manufacturer Part Number: HD64F2612FA20
• Description: IC H8S MCU FLASH 128K 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2612FA20

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 43
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 18 ROM
18.8
A software method using the CPU is employed to program and erase flash memory in the on-
board programming modes. Depending on the FLMCR1 setting, the flash memory operates in one
of the following four modes: Program mode, program-verify mode, erase mode, and erase-verify
mode. The programming control program in boot mode and the user program/erase control
program in user program mode use these operating modes in combination to perform
programming/erasing. Flash memory programming and erasing should be performed in
accordance with the descriptions in section 18.8.1, Program/Program-Verify and section 18.8.2,
Erase/Erase-Verify, respectively.
18.8.1
When writing data or programs to the flash memory, the program/program-verify flowchart shown
in Figure 18.9 should be followed. Performing programming operations according to this
flowchart will enable data or programs to be written to the flash memory without subjecting the
chip to voltage stress or sacrificing program data reliability.
1. Programming must be done to an empty address. Do not reprogram an address to which
2. Programming should be carried out 128 bytes at a time. A 128-byte data transfer must be
3. Prepare the following data storage areas in RAM: A 128-byte programming data area, a 128-
4. Consecutively transfer 128 bytes of data in byte units from the reprogramming data area or
5. The time during which the P bit is set to 1 is the programming time. Figure 18.9 shows the
6. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
7.
8.
Rev. 7.00 Sep. 11, 2009 Page 470 of 566
REJ09B0211-0700
programming has already been performed.
performed even if writing fewer than 128 bytes. In this case, H'FF data must be written to the
extra addresses.
byte reprogramming data area, and a 128-byte additional-programming data area. Perform
reprogramming data computation and additional programming data computation according to
Figure 18.9.
additional-programming data area to the flash memory. The program address and 128-byte
data are latched in the flash memory. The lower 8 bits of the start address in the flash memory
destination area must be H'00 or H'80.
allowable programming times.
An overflow cycle of approximately 6.6 ms is allowed.
For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 2
bits are B'00. Verify data can be read in longwords from the address to which a dummy write
was performed.
The maximum number of repetitions of the program/program-verify sequence of the same bit
is 1,000.
Flash Memory Programming/Erasing
Program/Program-Verify