EP4CGX150CF23I7N Altera, EP4CGX150CF23I7N Datasheet - Page 159

• Manufacturer Part Number: EP4CGX150CF23I7N
• Description: IC CYCLONE IV FPGA 150K 484FBGA
• Manufacturer: Altera
• Series: CYCLONE® IV GXr

Specifications of EP4CGX150CF23I7N

• Number Of Logic Elements/cells: 149760
• Number Of Labs/clbs: 9360
• Total Ram Bits: 6480000
• Number Of I /o: 270
• Voltage - Supply: 1.16 V ~ 1.24 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 484-FBGA
• Family Name: Cyclone IV
• Number Of Logic Blocks/elements: 149760
• # I/os (max): 270
• Operating Supply Voltage (typ): 1.2V
• Logic Cells: 149760
• Ram Bits: 6635520
• Operating Supply Voltage (min): 1.16V
• Operating Supply Voltage (max): 1.24V
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 484
• Package Type: FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of Gates: -
• Lead Free Status / Rohs Status: Compliant

Chapter 7: External Memory Interfaces in Cyclone IV Devices
Cyclone IV Devices Memory Interfaces Pin Support
Address and Control/Command Pins
Memory Clock Pins
© December 2010 Altera Corporation
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Some DDR2 SDRAM and DDR SDRAM devices support error correction coding
(ECC), a method of detecting and automatically correcting errors in data
transmission. In 72-bit DDR2 or DDR SDRAM, there are eight ECC pins and 64 data
pins. Connect the DDR2 and DDR SDRAM ECC pins to a separate DQS or DQ group
in Cyclone IV devices. The memory controller needs additional logic to encode and
decode the ECC data.
The address signals and the control or command signals are typically sent at a single
data rate. You can use any of the user I/O pins on all I/O banks of Cyclone IV devices
to generate the address and control or command signals to the memory device.
Cyclone IV devices do not support QDR II SRAM in the burst length of two.
In DDR2 and DDR SDRAM memory interfaces, the memory clock signals (CK and
CK#) are used to capture the address signals and the control or command signals.
Similarly, QDR II SRAM devices use the write clocks (K and K#) to capture the
address and command signals. The CK/CK# and K/K# signals are generated to
resemble the write-data strobe using the DDIO registers in Cyclone IV devices.
CK/CK# pins must be placed on differential I/O pins (DIFFIO in Pin Planner) and in
the same bank or on the same side as the data pins. You can use either side of the
device for wraparound interfaces. As seen in the Pin Planner Pad View, CK0 cannot be
located in the same row and column pad group as any of the interfacing DQ pins.
For more information about memory clock pin placement, refer to
Pin, and Board Layout Guidelines
of the External Memory Interface Handbook.
Cyclone IV Device Handbook, Volume 1
Volume 2: Device,
7–11