HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 787

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

22.6
Table 22.10 Flash Memory Characteristics
Conditions: V
Notes:
Item
Programming time *
Erase time *
Number of rewrites
Programming
Common
Erasing
1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set in flash
3. Time to erase one block. (Indicates the time during which the E1 bit is set in FLMCR1. Does not
4. Maximum programming time
5. Maximum erase time
Flash Memory Characteristics
1
*
memory control register 1 (FLMCR1). Does not include the program-verify time.)
include the erase-verify time.)
(t
(z0 + z1)
(t
3
P
E
*
(max) = Wait time after P1 bit setting (z)
(max) = Wait time after E1 bit setting (z)
(regular specifications), T
5
Wait time after SWE1 bit setting *
Wait time after PSU1 bit setting *
Wait time after P1 bit setting *
Wait time after P1 bit clearing *
Wait time after PSU1 bit clearing *
Wait time after PV1 bit setting *
Wait time after H'FF dummy write *
Wait time after PV1 bit clearing *
Maximum number of writes *
Wait time after SWE1 bit clearing *
Wait time after SWE1 bit setting *
Wait time after ESU1 bit setting *
Wait time after E1 bit setting *
Wait time after E1 bit clearing *
Wait time after ESU1 bit clearing *
Wait time after EV1 bit setting *
Wait time after H'FF dummy write *
Wait time after EV1 bit clearing *
Maximum number of erases *
CC
1
= 3.0 to 3.6 V, AV
*
2
*
4
6 + z2
994
CC
= 4.5 to 5.5 V, V
a
1
= –40 to +85°C (wide-range specifications)
*
1
1
1
*
*
4
*
1
1
1
1
5
4
5
1
1
1
1
1
1
1
1
1
1
1
Section 22 Electrical Characteristics (Preliminary)
Symbol
t
t
N
x0
y
z0
z1
z2
N1
N2
x1
x
y
z
N
P
E
maximum number of writes (N))
maximum number of erases (N))
WEC
SS
Rev. 5.00 Jan 10, 2006 page 761 of 1042
= AV
Min
—
—
—
1
50
—
—
—
5
5
4
2
2
—
—
100
1
100
—
10
10
6
2
4
—
SS
= 0 V, T
Typ
10
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
a
= –20 to +75°C
Max
200
1000
100
—
—
30
10
200
—
—
—
—
—
6
994
—
—
—
10
—
—
—
—
—
100
REJ09B0275-0500
Unit
ms/128 bytes
ms/block
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Times
µs
µs
µs
ms
µs
µs
µs
µs
µs
Times