HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 1028

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Appendix B Internal I/O Register
FLMCR2—Flash Memory Control Register 2
EBR1—Erase Block Register 1
Rev. 5.00 Jan 10, 2006 page 1002 of 1042
REJ09B0275-0500
Bit
Initial value
Read/Write
Bit
Initial value
Read/Write
:
:
:
:
:
:
Flash memory error
Notes: 1. This register is not present in the mask ROM version, and an
0 Flash memory is operating normally
1
FLER
R/W
EB7
R
7
0
7
0
Flash memory program/erase protection (error protection) is disabled
[Clearing condition]
Reset or hardware standby mode
An error has occurred during flash memory programming/erasing
Flash memory program/erase protection (error protection) is enabled
[Setting condition]
See section 19.8.3, Error Protection
2. To access this register, set the FLSHE bit to 1 in serial control
attempt to read it will return an undefined value.
register X (SCRX). Even if FLSHE = 1, if the chip is in a mode
in which the on-chip flash memory is disabled, a read will return
H'00 and writes are invalid. Writes to this register are also
invalid when the FWE bit in FLMCR1 is not set to 1.
R/W
EB6
—
—
6
0
6
0
Sets flash memory erase area block by block
EB5
R/W
—
—
5
0
5
0
EB4
R/W
—
—
4
0
4
0
H'FFA9
H'FFAA
EB3
R/W
—
—
3
0
3
0
EB2
R/W
—
—
2
0
2
0
R/W
EB1
—
—
1
0
1
0
R/W
EB0
—
—
0
0
0
0
ROM
ROM