HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 677

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 19 ROM (Preliminary)
19.7.1
Program Mode
When writing data or programs to flash memory, the program/program-verify flowchart shown in
figure 19.11 should be followed. Performing programming operations according to this flowchart
will enable data or programs to be written to flash memory without subjecting the device to
voltage stress or sacrificing program data reliability. Programming should be carried out 128 bytes
at a time.
The wait times after bits are set or cleared in the flash memory control register 1 (FLMCR1) and
the maximum number of programming operations (N) are shown in table 22.10.
Following the elapse of ( 0) µs or more after the SWE1 bit is set to 1 in FLMCR1, 128-byte
program data is stored in the program data area and reprogram data area, and the 128-byte data in
the program data area in RAM is written consecutively to the program address (the lower 8 bits of
the first address written to must be H'00 or H'80). 128 consecutive byte data transfers are
performed. The program address and program data are latched in the flash memory. A 128-byte
data transfer must be performed even if writing fewer than 128 bytes; in this case, H'FF data must
be written to the extra addresses.
Next, the watchdog timer is set to prevent overprogramming in the event of program runaway, etc.
Set 6.6 ms as the WDT overflow period. After this, preparation for program mode (program setup)
is carried out by setting the PSU1 bit in FLMCR1, and after the elapse of (y) µs or more, the
operating mode is switched to program mode by setting the P1 bit in FLMCR1. The time during
which the P1 bit is set is the flash memory programming time. Refer to the table in figure 19.11
for the programming time.
Rev. 5.00 Jan 10, 2006 page 651 of 1042
REJ09B0275-0500