S912XET256J2VAGR Freescale Semiconductor, S912XET256J2VAGR Datasheet - Page 1233

• Manufacturer Part Number: S912XET256J2VAGR
• Description: 16-bit Microcontrollers - MCU Watchdog OSC/Timer -40 C to + 105 C HCS12X MCU SPI
• Manufacturer: Freescale Semiconductor

Specifications of S912XET256J2VAGR

• Core: HCS12X
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 256 KB
• Data Ram Size: 16 KB
• On-chip Adc: Yes
• Package / Case: LQFP
• Mounting Style: SMD/SMT
• A/d Bit Size: 12 bit
• A/d Channels Available: 24
• Interface Type: CAN, SCI, SPI
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 119
• Number Of Timers: 25
• Program Memory Type: Flash
• Supply Voltage - Max: 1.98 V, 2.9 V, 5.5 V
• Supply Voltage - Min: 1.72 V, 2.7 V, 3.13 V

The number of program/erase cycles for the EEPROM/D-Flash depends upon the partitioning of D-Flash
used for EEPROM Emulation. Defining RAM size allocated for EEE as EEE-RAM and D-Flash partition
allocated to EEE as EEE_NVM, the minimum number of program/erase cycles is specified depending
upon the ratio of EEE_NVM/EEE_RAM. The minimum ratio EEE_NVM/EEE_RAM =8.
Freescale Semiconductor
5. This represents the number of writes of updated data words to the EEE_RAM partition. Typical endurance performance for
6. This is equivalent to using a single byte or aligned word in the EEE_RAM with 32K D-Flash allocated for EEEPROM
# K Cycles
(Log)
1,000,000
the Emulated EEPROM array is based on typical endurance performance and the EEE algorithm implemented on this
product family. Spec. table quotes typical endurance evaluated at 25°C for this product family.
100,000
10,000
1,000
100
10
10
Figure A-2. Program/Erase Dependency on D-Flash Partitioning
100
MC9S12XE-Family Reference Manual Rev. 1.25
1000
10,000
100,000
EEE_NVM/EEE_RAM ratio
(Log)
Appendix A Electrical Characteristics
20% Spec Cycles
10 Year Data Retention
Spec Cycles
5 Year Data Retention
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