S912XET256J2VAGR Freescale Semiconductor, S912XET256J2VAGR Datasheet - Page 1221

• Manufacturer Part Number: S912XET256J2VAGR
• Description: 16-bit Microcontrollers - MCU Watchdog OSC/Timer -40 C to + 105 C HCS12X MCU SPI
• Manufacturer: Freescale Semiconductor

Specifications of S912XET256J2VAGR

• Core: HCS12X
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 256 KB
• Data Ram Size: 16 KB
• On-chip Adc: Yes
• Package / Case: LQFP
• Mounting Style: SMD/SMT
• A/d Bit Size: 12 bit
• A/d Channels Available: 24
• Interface Type: CAN, SCI, SPI
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 119
• Number Of Timers: 25
• Program Memory Type: Flash
• Supply Voltage - Max: 1.98 V, 2.9 V, 5.5 V
• Supply Voltage - Min: 1.72 V, 2.7 V, 3.13 V

1. Refer to A.2.2.3 for further information concerning source resistance
A.2.3
Table A-17
injection, input capacitance and source resistance.
A.2.3.1
For the following definitions see also
Differential non-linearity (DNL) is defined as the difference between two adjacent switching steps.
The integral non-linearity (INL) is defined as the sum of all DNLs:
Freescale Semiconductor
Conditions are shown in
Num C
1
2
3
4
5
6
C Max input source resistance
D Total input capacitance Non sampling
D Input internal Resistance
C Disruptive analog input current
C Coupling ratio positive current injection
C Coupling ratio negative current injection
The additional input voltage error on the converted channel can be calculated as:
with I
Total input capacitance Sampling
and
ATD Accuracy
INJ
ATD Accuracy Definitions
V
Table A-18
being the sum of the currents injected into the two pins adjacent to the converted channel.
ERR
Table A-4
= K * R
specify the ATD conversion performance excluding any errors due to current
S
unless otherwise noted
Rating
* I
MC9S12XE-Family Reference Manual Rev. 1.25
Table A-16. ATD Electrical Characteristics
(1)
INJ
INL n ( )
Figure
DNL i ( )
=
i
A-1.
∑
=
n
1
=
DNL i ( )
V
------------------------- - 1
i
1LSB
–
V
i 1
=
–
Symbol
V
-------------------- - n
1LSB
C
C
R
n
I
–
R
K
K
NA
INN
INS
INA
–
S
p
n
V
0
–
–2.5
Min
—
—
—
—
—
—
Appendix A Electrical Characteristics
Typ
—
—
—
—
—
—
5
1E-4
2E-3
Max
2.5
10
16
15
1
Unit
A/A
A/A
mA
KΩ
kΩ
pF
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