SAM9M10 Atmel Corporation, SAM9M10 Datasheet - Page 280
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SAM9M10
Manufacturer Part Number
SAM9M10
Description
Manufacturer
Atmel Corporation
Datasheets
1.M40800.pdf
(284 pages)
2.SAM9261.pdf
(248 pages)
3.SAM9M10.pdf
(59 pages)
4.SAM9M10.pdf
(1398 pages)
Specifications of SAM9M10
Flash (kbytes)
0 Kbytes
Pin Count
324
Max. Operating Frequency
400 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
160
Ext Interrupts
160
Usb Transceiver
3
Usb Speed
Hi-Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
2
Uart
5
Lin
4
Ssc
2
Ethernet
1
Sd / Emmc
2
Graphic Lcd
Yes
Video Decoder
Yes
Camera Interface
Yes
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
440
Resistive Touch Screen
Yes
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
64
Self Program Memory
NO
External Bus Interface
2
Dram Memory
DDR2/LPDDR, SDRAM/LPSDR
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
0.9 to 1.1
Fpu
No
Mpu / Mmu
No / Yes
Timers
6
Output Compare Channels
6
Input Capture Channels
6
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
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23.3.1
23.3.2
280
SAM9M10
Write Access
Read Access
mend to utilize either 1 ECC per 256 bytes of data, 1 ECC per 512 bytes of data or 1 ECC for all
of the page.
The only configurations required for ECC are the NAND Flash or the SmartMedia page size
(528/2112/4224) and the type of correction wanted (1 ECC for all the page/1 ECC per 256 bytes
of data /1 ECC per 512 bytes of data). Page size is configured setting the PAGESIZE field in the
ECC Mode Register (ECC_MR). Type of correction is configured setting the TYPeCORRECT
field in the ECC Mode Register (ECC_MR).
ECC is automatically computed as soon as a read (00h)/write (80h) command to the NAND
Flash or the SmartMedia is detected. Read and write access must start at a page boundary.
ECC results are available as soon as the counter reaches the end of the main area. Values in
the ECC Parity Registers (ECC_PR0 to ECC_PR15) are then valid and locked until a new start
condition occurs (read/write command followed by address cycles).
Once the Flash memory page is written, the computed ECC codes are available in the ECC Par-
ity (ECC_PR0 to ECC_PR15) registers. The ECC code values must be written by the software
application in the extra area used for redundancy. The number of write accesses in the extra
area is a function of the value of the type of correction field. For example, for 1 ECC per 256
bytes of data for a page of 512 bytes, only the values of ECC_PR0 and ECC_PR1 must be writ-
ten by the software application. Other registers are meaningless.
After reading the whole data in the main area, the application must perform read accesses to the
extra area where ECC code has been previously stored. Error detection is automatically per-
formed by the ECC controller. Please note that it is mandatory to read consecutively the entire
main area and the locations where Parity and NParity values have been previously stored to let
the ECC controller perform error detection.
The application can check the ECC Status Registers (ECC_SR1/ECC_SR2) for any detected
errors. It is up to the application to correct any detected error. ECC computation can detect four
different circumstances:
• No error: XOR between the ECC computation and the ECC code stored at the end of the
• Recoverable error: Only the RECERR flags in the ECC Status registers
• ECC error: The ECCERR flag in the ECC Status Registers (ECC_SR1/ECC_SR2) are set.
• Non correctable error: The MULERR flag in the ECC Status Registers
NAND Flash or SmartMedia page is equal to 0. No error flags in the ECC Status Registers
(ECC_SR1/ECC_SR2).
(ECC_SR1/ECC_SR2) are set. The corrupted word offset in the read page is defined by the
WORDADDR field in the ECC Parity Registers (ECC_PR0 to ECC_PR15). The corrupted bit
position in the concerned word is defined in the BITADDR field in the ECC Parity Registers
(ECC_PR0 to ECC_PR15).
An error has been detected in the ECC code stored in the Flash memory. The position of the
corrupted bit can be found by the application performing an XOR between the Parity and the
NParity contained in the ECC code stored in the Flash memory.
(ECC_SR1/ECC_SR2) are set. Several unrecoverable errors have been detected in the
Flash memory page.
6355D–ATARM–7-Sep-11
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