LPC1810FET100,551 NXP Semiconductors, LPC1810FET100,551 Datasheet - Page 349

• Manufacturer Part Number: LPC1810FET100,551
• Description: IC MCU 32BIT 136KB FLSH 100TFBGA
• Manufacturer: NXP Semiconductors
• Series: LPC18xxr

Specifications of LPC1810FET100,551

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: CAN, EBI/EMI, I²C, Microwire, SPI, SSI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 64
• Program Memory Size: -
• Program Memory Type: ROMless
• Eeprom Size: -
• Ram Size: 136K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 1x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
<Document ID>
User manual
19.9.1 Low-power SDRAM Deep-sleep Mode
19.9.2 Low-power SDRAM partial array refresh
Self-refresh mode can be entered by software by setting the SREFREQ bit in the
DynamicControl Register and polling the SREFACK bit in the Status Register.
Any transactions to memory that are generated while the memory controller is in
self-refresh mode are rejected and an error response is generated to the AHB bus.
Clearing the SREFREQ bit in the DynamicControl Register returns the memory to normal
operation. See the memory data sheet for refresh requirements.
Note: The static memory can be accessed as normal when the SDRAM memory is in
self-refresh mode.
The EMC supports JEDEC low-power SDRAM deep-sleep mode. Deep-sleep mode can
be entered by setting the deep-sleep mode (DP) bit, the dynamic memory clock enable bit
(CE), and the dynamic clock control bit (CS) in the DynamicControl register. The device is
then put into a low-power mode where the device is powered down and no longer
refreshed. All data in the memory is lost.
The EMC supports JEDEC low-power SDRAM partial array refresh. Partial array refresh
can be programmed by initializing the SDRAM memory device appropriately. When the
memory device is put into self-refresh mode only the memory banks specified are
refreshed. The memory banks that are not refreshed lose their data contents.
All information provided in this document is subject to legal disclaimers.
Rev. 00.13 — 20 July 2011
Chapter 19: LPC18xx External Memory Controller (EMC)
UM10430
© NXP B.V. 2011. All rights reserved.
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