DF2166VT33WV Renesas Electronics America, DF2166VT33WV Datasheet - Page 692

• Manufacturer Part Number: DF2166VT33WV
• Description: MCU 16BIT FLASH 3V 512K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2166VT33WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

1. Select the on-chip program to be downloaded
2. Set the FEBS parameter necessary for erasure
3. Erasure
4. The return value in the erasing program, FPFR (general register R0L) is determined.
5. Determine whether erasure of the necessary blocks has completed.
6. After erasure completes, clear FKEY and specify software protection.
Rev. 3.00, 03/04, page 650 of 830
Set the EPVB bit in FECS to 1.
Several programming/erasing programs cannot be selected at one time. If several programs are
set, download is not performed and a download error is reported to the SS bit in the DPFR
parameter.
Specify the start address of a download destination by FTDAR.
The procedures to be carried out after setting FKEY, e.g. download and initialization, are the
same as those in the programming procedure. For details, refer to Programming Procedure in
User Program Mode in section 20.4.2, sub-section (2).
The procedures after setting parameters for erasing programs are as follows:
Set the erase block number of the user MAT in the flash erase block select parameter FEBS
(general register ER0). If a value other than an erase block number of the user MAT is set, no
block is erased even though the erasing program is executed, and an error is returned to the
return value parameter FPFR.
Similar to as in programming, there is an entry point of the erasing program in the area from
the start address of a download destination specified by FTDAR + 16 bytes of on-chip RAM.
The subroutine is called and erasing is executed by using the following steps.
MOV.L
JSR
NOP
•
•
•
If more than one block is to be erased, update the FEBS parameter and repeat steps 2 to 5.
Blocks that have already been erased can be erased again.
If this LSI is restarted by a reset immediately after user MAT erasure has completed, secure
the reset period (period of RES = 0) of 100 µs which is longer than normal.
The general registers other than R0L are held in the erasing program.
R0L is a return value of the FPFR parameter.
Since the stack area is used in the erasing program, a stack area of 128 bytes at the
maximum must be allocated in RAM.
#DLTOP+16,ER2
@ER2
; Set entry address to ER2
; Call erasing routine