DF2117VLP20V Renesas Electronics America, DF2117VLP20V Datasheet - Page 731

• Manufacturer Part Number: DF2117VLP20V
• Description: IC H8S/2117 MCU FLASH 145TFLGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VLP20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 145-TFLGA
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Bit
7
6
5
4
3 to 1
Bit Name
⎯
⎯
⎯
FLER
⎯
Initial
Value
1
0
0
0
All 0
R/W
R
R
R
R
R
Description
Reserved
These are read-only bits and cannot be modified.
Flash Memory Error
Indicates that an error has occurred during programming
or erasing the flash memory. When this bit is set to 1,
the flash memory enters the error protection state.
When this bit is set to 1, high voltage is applied to the
internal flash memory. To reduce the damage to the
flash memory, the reset must be released after the reset
input period (period of RES = 0) of at least 100 μs.
0: Flash memory operates normally (Error protection is
[Clearing condition]
•
1: An error occurs during programming/erasing flash
[Setting conditions]
•
•
•
Reserved
These are read-only bits and cannot be modified.
invalid)
At a power-on reset
memory (Error protection is valid)
When an interrupt, such as NMI, occurs during
programming/erasing.
When the flash memory is read during
programming/erasing (including a vector read and
an instruction fetch).
When the SLEEP instruction is executed during
programming/erasing (including software standby
mode).
Rev. 3.00 Sep. 28, 2009 Page 685 of 910
Section 22 Flash Memory
REJ09B0350-0300