UPD70F3737GC-UEU-AX Renesas Electronics America, UPD70F3737GC-UEU-AX Datasheet - Page 771

• Manufacturer Part Number: UPD70F3737GC-UEU-AX
• Description: MCU 32BIT V850ES/JX3-L 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Lr

Specifications of UPD70F3737GC-UEU-AX

• Package / Case: *
• Voltage - Supply (vcc/vdd): 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Speed: 20MHz
• Number Of I /o: 84
• Core Processor: RISC
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Program Memory Size: 128KB (128K x 8)
• Data Converters: A/D 12x10b, D/A 2x8b
• Oscillator Type: Internal
• Peripherals: DMA, LVD, PWM, WDT
• Connectivity: CSI, EBI/EMI, I²C, UART/USART
• Core Size: 32-Bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

28.5 Rewriting by Self Programming
28.5.1 Overview
memory by itself. By using this interface and a self programming library that is used to rewrite the flash memory with a
user application program, the flash memory can be rewritten by a user application transferred in advance to the
internal RAM or external memory. Consequently, the user program can be upgraded and constant data
rewritten in the field.
The V850ES/JG3-L supports a flash macro service that allows the user program to rewrite the internal flash
Note Be sure not to allocate the program code to the block where the constant data of rewriting target is allocated.
See 28.2 Memory Configuration for the block configuration.
Figure 28-16. Concept of Self Programming
Flash function execution Flash information
Preliminary User’s Manual U18953EJ1V0UD
Self programming library
CHAPTER 28 FLASH MEMORY
Flash macro service
Flash memory
Application program
Erase, write
Note
can be
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