HD64F2218UTF24 Renesas Electronics America, HD64F2218UTF24 Datasheet - Page 740

• Manufacturer Part Number: HD64F2218UTF24
• Description: IC H8S MCU FLASH 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2218UTF24

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 24MHz
• Connectivity: SCI, SmartCard, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: 3DK2218-SS - KIT DEV H8S/2218 WINDOWS SIDESHW
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

22.8
General Notice during Design for Printed Circuit Board: Measures for radiation noise caused
by the transient current in this LSI should be taken into consideration. The examples of the
measures are shown below.
• To use a multilayer printed circuit board which includes layers for Vcc and GND.
• To mount by-pass capacitors (approximately 0.1 μF) between the Vcc and GND (Vss) pins,
Characteristics of F-ZTAT and Masked ROM Versions: Though the F-ZTAT version and the
masked ROM version satisfy electrical characteristics described in this manual, the actual value of
electrical characteristics, operating margin, and noise margin may differ due to the differences of
production process, on-chip ROM, and layout patterning.
When the system has been evaluated with the F-ZTAT version, the equivalent evaluation should
be implemented to the masked ROM version when shifted to the masked ROM version.
Rev.7.00 Dec. 24, 2008 Page 684 of 698
REJ09B0074-0700
and the PLLVcc and PLLGND pins, of this LSI.
3. Block erase time (Shows the total period for which the E1-bit FLMCR1 is set. It does not
4. Maximum programming time value
5. Maximum erasure time value
6. Minimum times that guarantee all characteristics after programming. (The guaranteed
7. Reference value when the temperature is 25°C. (It is reference that reprogramming is
8. Data hold characteristics when reprogramming is performed within the range of
Usage Note
include the erase verification time.)
t
range is 1 to the minimum value.)
normally enabled up to this value.)
specifications including the minimum value.
E
(max.) = Wait time after E1 bit set (z) × maximum erasure count (N)
t
p
(max.) = Wait time after P1 bit set (z) × maximum programming count (N1 + N2)
= (Z0 + Z2) × 6 + Z1 × 994