HD64F7051SFJ20V Renesas Electronics America, HD64F7051SFJ20V Datasheet - Page 570

• Manufacturer Part Number: HD64F7051SFJ20V
• Description: MCU 5V 256K J-TEMP PB-FREE QFP-1
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7050r

Specifications of HD64F7051SFJ20V

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, SCI
• Peripherals: DMA, WDT
• Number Of I /o: 102
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 168-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 ROM (128 kB Version)
18.5.3
EBR1 is an 8-bit readable/writable register that specifies the flash memory erase area block by
block. EBR1 is initialized to H'00 by a reset, in hardware standby mode and software standby
mode, when a low level is input to the FWE pin, and when a high level is input to the FWE pin
and the SWE bit in FLMCR1 is not set. When a bit in EBR1 is set to 1, the corresponding block
can be erased. Other blocks are erase-protected. Set only one bit in EBR1 (more than one bit
cannot be set). When on-chip flash memory is disabled, a read will return H'00, and writes are
invalid.
The flash memory block configuration is shown in table 18.3.
Table 18.3 Flash Memory Erase Blocks
Block (Size)
EB0 (32 kB)
EB1 (32 kB)
EB2 (32 kB)
EB3 (28 kB)
EB4 (1 kB)
EB5 (1 kB)
EB6 (1 kB)
EB7 (1 kB)
Rev. 5.00 Jan 06, 2006 page 548 of 818
REJ09B0273-0500
Initial value:
Erase Block Register 1 (EBR1)
R/W:
Bit:
EB7
R/W
7
0
EB6
R/W
6
0
Address
H'000000–H'007FFF
H'008000–H'00FFFF
H'010000–H'017FFF
H'018000–H'01EFFF
H'01F000–H'01F3FF
H'01F400–H'01F7FF
H'01F800–H'01FBFF
H'01FC00–H'01FFFF
R/W
EB5
5
0
R/W
EB4
4
0
R/W
EB3
3
0
R/W
EB2
2
0
R/W
EB1
1
0
R/W
EB0
0
0