HD6433640 HITACHI [Hitachi Semiconductor], HD6433640 Datasheet - Page 177

• Manufacturer Part Number: HD6433640
• Description: H8/3644 Series Hardware Manual
• Manufacturer: HITACHI [Hitachi Semiconductor]

Table 6.20 Flash Memory AC Characteristics
V
V
T
Item
Programming time*
Erase time*
Reprogramming capability
Verify setup time 1*
Verify setup time 2*
Flash memory read setup time*
Notes: 1. Follow the program/erase algorithms shown in section 6 when making the settings.
168
a
CC
PP
= –20 C to +75 C (regular specifications), T
= 12.0 V 0.6 V
= 3.0 V to 5.5 V, AV
2. Indicates the programming time per byte (the time during which the P bit is set in the
3. Indicates the time to erase all blocks (32 kB) (the time during which the E bit is set in
4. After powering on when using an external clock, when the programming voltage (V
flash memory control register (FLMCR)). Does not include the program-verify time.
FLMCR). Does not include the prewrite time before erasing of the erase-verify time.
switched from 12 V to V
allowed to elapse before reading the flash memory.
When V
voltage reaches the V
1,
*
3
1,
PP
1
1
*
is released, this specifies the setup time from the point at which the V
2
CC
= 3.0 V to 5.5 V, AV
4
CC
CC
+ 2 V level until the flash memory is read.
Symbol
t
t
N
t
t
t
P
E
VS1
VS2
FRS
, an interval at least equal to the read setup time must be
WEC
Min
—
—
—
4
2
50
100
a
= –40 C to +85 C (wide-range specifications)
REF
= 3.0 V to AV
Typ
50
1
—
—
—
—
—
Max
1000
30
100
—
—
—
—
CC
, V
SS
Unit
s
Times
= AV
s
s
s
s
SS
Test Conditions
V
V
= 0 V,
CC
CC
4.5 V
4.5 V
PP
PP
) is