MC9S12P32CFT Freescale Semiconductor, MC9S12P32CFT Datasheet - Page 427

• Manufacturer Part Number: MC9S12P32CFT
• Description: MCU 16BIT 32K FLASH 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12P32CFT

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN Exposed Pad
• Processor Series: S12P
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, DEMO9S12PFAME
• Package: 48QFN EP
• Family Name: HCS12
• Maximum Speed: 32 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Interface Type: CAN/SCI/SPI
• On-chip Adc: 10-chx12-bit
• Number Of Timers: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

13.1.2
13.1.2.1
13.1.2.2
13.1.2.3
13.1.3
The block diagram of the Flash module is shown in
Freescale Semiconductor
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
128 Kbytes of P-Flash memory composed of one 128 Kbyte Flash block divided into 256 sectors
of 512 bytes
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the D-Flash memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
4 Kbytes of D-Flash memory composed of one 4 Kbyte Flash block divided into 16 sectors of 256
bytes
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of D-Flash memory
Ability to program up to four words in a burst sequence
No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
Features
Block Diagram
P-Flash Features
D-Flash Features
Other Flash Module Features
S12P-Family Reference Manual, Rev. 1.13
Figure
13-1.
128 KByte Flash Module (S12FTMRC128K1V1)
427