DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 938

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

Section 19 ROM
19.30
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas microcomputer device type with 512-kbyte on-chip flash memory (FZTAT512V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Powering on and off (see figures 19.86 to 19.88): Do not apply a high level to the FWE pin until
V
When applying or disconnecting V
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
FWE application/disconnection (see figures 19.86 to 19.88): FWE application should be carried
out when MCU operation is in a stable condition. If MCU operation is not stable, fix the FWE pin
low and set the protection state.
The following points must be observed concerning FWE application and disconnection to prevent
unintentional programming or erasing of flash memory:
• Apply FWE when the V
• Apply FWE when oscillation has stabilized (after the elapse of the oscillation stabilization
• In boot mode, apply and disconnect FWE during a reset.
• In user program mode, FWE can be switched between high and low level regardless of the
• Do not apply FWE if program runaway has occurred.
• Disconnect FWE only when the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits in FLMCR1,
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REJ09B0220-0600
CC
time).
reset state. FWE input can also be switched during execution of a program in flash memory.
and SWE2, ESU2, PSU2, EV2, PV2, P2, and E2 bits in FLMCR2 are cleared.
Make sure that the SWE1, ESU1, PSU1, EV1, PV1, P1, E1, and SWE2, ESU2, PSU2, EV2,
PV2, P2, and E2 bits are not set by mistake when applying or disconnecting FWE.
has stabilized. Also, drive the FWE pin low before turning off V
Flash Memory Programming and Erasing Precautions
CC
voltage has stabilized within its rated voltage range.
CC
power, fix the FWE pin low and place the flash memory in
CC
.