DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 818

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

Section 19 ROM
19.11.7 Status Read Mode
• Status read mode is used to identify what type of abnormal end has occurred. Use this mode
• The return code is retained until a command write for other than status read mode is
Table 19.21 AC Characteristics in Status Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
OE output delay time
Disable delay time
CE output delay time
WE rise time
WE fall time
Rev.6.00 Sep. 27, 2007 Page 786 of 1268
REJ09B0220-0600
when an abnormal end occurs in auto-program mode or auto-erase mode.
performed.
I/O
A
5
18
to I/O
to A
I/O
I/O
WE
CE
OE
0
7
6
0
CC
= 3.3 V ±0.3 V, V
Figure 19.26 Auto-Erase Mode Timing Waveforms
t
ces
t
f
t
ds
t
wep
H'20
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
oe
df
ce
r
f
t
SS
t
ceh
r
t
= 0 V, T
dh
t
nxtc
a
= 25°C ±5°C
H'20
Min
20
0
0
50
50
70
—
—
—
—
—
Erase end identifi-
cation signal
Erase normal end
confirmation signal
t
ests
t
erase
t
spa
Max
—
—
—
—
—
—
150
100
150
30
30
H'00
t
nxtc
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns