DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 847
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 847 of 1304
- Download datasheet (8Mb)
Section 19 ROM
19.15.2 User Program Mode
When set to user program mode, the chip can program and erase its flash memory by executing a
user program/erase control program. Therefore, on-board reprogramming of the on-chip flash
memory can be carried out by providing on-board means of FWE control and supply of
programming data, and storing a program/erase control program in part of the program area as
necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7),
and apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 6 and 7.
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory. When the program is located in external memory, an instruction for
programming the flash memory and the following instruction should be located in on-chip RAM.
Figure 19.40 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Rev.6.00 Sep. 27, 2007 Page 815 of 1268
REJ09B0220-0600
Related parts for DF2328BVF25V
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
KIT STARTER FOR M16C/29
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C/2D
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
R0K33062P STARTER KIT
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C/23 E8A
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C/25
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER H8S2456 SHARPE DSPLY
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C38C
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C35C
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8CL3AC+LCD APPS
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR RX610
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R32C/118
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT DEV RSK-R8C/26-29
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR SH7124
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR H8SX/1622
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT DEV FOR SH7203
Manufacturer:
Renesas Electronics America
Datasheet: