DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 1009

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

22.2.6
Table 22.22 Flash Memory Characteristics
Conditions: V
Item
Programming time
Erase time
Rewrite times
Data hold time
Programming Wait time after SWE bit setting
Erasing
*
Flash Memory Characteristics
1
*
3
0 V, T
specifications), T
wide-range specifications)
Wait time after PSU bit setting
Wait time after P bit setting
Wait time after P bit clearing
Wait time after PSU bit clearing
Wait time after PV bit setting
Wait time after H'FF dummy write
Wait time after PV bit clearing
Wait time after SWE bit clearing
Maximum number of writes
Wait time after SWE bit setting
Wait time after ESU bit setting
Wait time after E bit setting
Wait time after E bit clearing
Wait time after ESU bit clearing
Wait time after EV bit setting
Wait time after H'FF dummy write
Wait time after EV bit clearing
Wait time after SWE bit clearing
Maximum number of erases
*
CC
6
*
1
= 3.0 V to 3.6 V, AV
*
2
a
*
= 0°C to +75°C (program/erase operating temperature range: regular
4
a
= 0°C to +85°C (program/erase operating temperature range:
*
*
*
*
1
1
*
*
1
*
*
CC
1
1
1
*
1
*
1
*
*
*
*
*
*
*
*
4
6
1
4
1
1
1
*
*
1
1
6
= 3.0 V to 3.6 V, V
*
*
1
1
1
1
*
*
1
1
Symbol
t
t
N
t
x
y
z
α
β
γ
ε
η
θ
N
x
y
z
α
β
γ
ε
η
θ
N
P
E
DRP
WEC
*
9
(z1) —
(z2) —
(z3) —
Rev.6.00 Sep. 27, 2007 Page 977 of 1268
Min
—
—
100 *
10
1
50
5
5
4
2
2
100
—
1
100
—
10
10
20
2
4
100
—
7
ref
Section 22 Electrical Characteristics
Typ
10
50
10000 *
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 3.0 V to AV
8
Max
200
1000
—
—
—
—
30
200
10
—
—
—
—
—
—
1000 *
—
—
10
—
—
—
—
—
—
100
5
Unit
ms/
128 bytes
ms/block
Times
year
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
μs
μs
ms
μs
μs
μs
μs
μs
μs
Times
CC
REJ09B0220-0600
, V
SS
= AV
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Wait time for
additional
writing
Wait time for
erase time
SS
=