DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 910
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 19 ROM
19.25
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transition to these modes can be made for
addresses H'000000 to H'03FFFF by setting the PSU1, ESU1, P1, E1, PV1, and EV1 bits in
FLMCR1, and for addresses H'040000 to H'07FFFF by setting the PSU2, ESU2, P2, E2, PV2, and
EV2 bits in FLMCR2.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM, external memory, or flash memory except for the above
address areas. When the program is located in external memory, an instruction for programming
the flash memory and the following instruction should be located in on-chip RAM. The DMAC or
DTC should not be activated before or after the instruction for programming the flash memory is
executed.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE1, ESU1, PSU1, EV1, PV1,
19.25.1 Program Mode (n = 1 for addresses H'000000 to H'03FFFF and n = 2 for addresses
Follow the procedure shown in the program/program-verify flowchart in figure 19.70 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.
For the wait times (x, y, z1, z2, z3 α, ß, γ, ε, η, and θ) after bits are set or cleared in flash memory
control register n (FLMCRn) and the maximum number of programming operations (N), see
section 22.2.6, Flash Memory Characteristics.
Rev.6.00 Sep. 27, 2007 Page 878 of 1268
REJ09B0220-0600
2. When programming or erasing, set FWE to 1 (programming/erasing is not performed
3. Perform programming in the erased state. Do not perform additional programming on
4. Do not program addresses H'000000 to H'03FFFF and H'040000 to H'07FFFF
Programming/Erasing Flash Memory
H'040000 to H'07FFFF)
E1, and P1 bits in FLMCR1 or setting/resetting of the SWE2, ESU2, PSU2, EV2, PV2,
E2, and P2 bits in FLMCR2 is executed by a program in flash memory.
when FWE = 0).
previously programmed addresses.
simultaneously. Operation is not guaranteed when programming is performed
simultaneously.
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