DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 230

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

Section 6 Bus Controller
6.6
When burst mode is selected with the DRAM interface, the DACK output timing can be selected
with the DDS bit. When DRAM space is accessed in DMAC single address mode at the same
time, this bit selects whether or not burst access is to be performed.
6.6.1
Burst access is performed by determining the address only, irrespective of the bus master. The
DACK output goes low from the T
Figure 6.28 shows the DACK output timing for the DRAM interface when DDS = 1.
Rev.6.00 Sep. 27, 2007 Page 198 of 1268
REJ09B0220-0600
Figure 6.28 DACK Output Timing when DDS = 1 (Example of DRAM Access)
DMAC Single Address Mode and DRAM Interface
(Not supported in the H8S/2321)
When DDS = 1
Note: n = 2 to 5
Read
Write
LCAS (LCAS)
CAS (UCAS)
HWR (WE)
HWR (WE)
CSn (RAS)
D
D
A
15
15
23
DACK
to D
to D
to A
φ
0
0
0
C1
state in the case of the DRAM interface.
T
p
Row
T
r
T
c1
Column
T
c2