DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 894

MCU 3V 128K 100-TQFP

DF2317VTE25

Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2317VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25

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Manufacturer
Quantity
Price
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Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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Section 20 Electrical Characteristics
20.3.6
Table 20.29 Flash Memory Characteristics
Condition B: V
Item
Programming time *
Erase time *
Programming time (total) *
Erase time (total) *
Programming and erase time
(total) *
Number of overwrites
Data retention time *
Notes: 1. The exact programming and erase times depend on the characteristics of the data.
Rev.7.00 Feb. 14, 2007 page 860 of 1108
REJ09B0089-0700
1
*
2. Programming and erase times do not include data transfer time.
3. This is the minimum number of rewrites after which all characteristics are guaranteed.
4. This characteristic applies when the number of rewrites is within the specification range,
5. Reference value for 25°C (as a guideline, rewriting should normally function up to this
2
*
Flash Memory Characteristics
4
1
(The guaranteed range is 1 to minimum.)
including minimum values.
value).
*
3
*
0 V, T
specifications), T
wide-range specifications)
4
CC
1
1
*
4
*
2
= 3.0 V to 3.6 V, AV
2
*
4
*
a
4
= 0°C to +75°C (program/erase operating temperature range: regular
1
*
2
*
4
Symbol
t
t
∑t
NWEC
t
∑t
∑t
P
E
DRP
a
P
E
PE
= 0°C to +85°C (program/erase operating temperature range:
Min
100 *
10
CC
= 3.0 V to 3.6 V, V
3
Typ
3
80
500
1000
10
10000 *
10
20
5
Max
30
800
5000
10000
30
30
60
ref
= 3.0 V to AV
Unit
ms/128 bytes
ms/4-kbyte
block
ms/32-kbyte
block
ms/64-kbyte
block
s/512 kbytes
Times
Years
s/512 kbytes
s/512 kbytes
CC
Test Conditions
T
cleared to 0
T
, V
a
a
= 25°C when all
= 25°C
SS
= AV
SS
=

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