DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 757

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Note that memory read of the user MAT/user boot MAT can only read the program data after all
user MAT/user boot MAT has automatically been erased.
[2]
[4]
(Program end)
Wait for program data
programming/erasing
(reset by boot mode)
Boot mode initiation
setting command
Wait for inquiry
command
[3]
Wait for
Figure 17.67 Overview of Boot Mode State Transition
user boot MAT erasure
(Program command reception)
All user MAT and
(Program data transmission)
(Erasure end)
Inquiry command response
(Bit rate adjustment)
Inquiry command reception
Read/check command
reception
H'00 to H'00 reception
H'00 transmission
(adjustment completed)
Command response
(Erasure command reception)
read/check command
Bit rate adjustment
Wait for erase-block
Rev.7.00 Feb. 14, 2007 page 723 of 1108
Processing of
inquiry setting
Processing of
command
data
(Erase-block specification)
[1]
REJ09B0089-0700
Section 17 ROM