DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 819
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
3 643
Company:
Part Number:
DF2317VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Table 17.69 AC Characteristics Auto-Erase Mode
Condition: V
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
I/O5-0
A18-0
I/O7
I/O6
WE
OE
CE
CC
= 3.3 V ± 0.3 V, V
t
ces
tf
t
t
ds
wep
Figure 17.93 Timing in Auto-Erase Mode
H'20 or
H'25
t
tr
ceh
t
dh
SS
t
nxtc
= 0 V, T
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
a
H'20 or
H'25
= 25˚C ± 5˚C
Erase normal
and confirmation
signal
Erase end
identification
signal
t
ests
Min
20
0
0
50
50
70
1
—
100
—
—
Rev.7.00 Feb. 14, 2007 page 785 of 1108
t
erase
t
spa
H'00
Max
—
—
—
—
—
—
—
150
40000
30
30
t
nxtc
REJ09B0089-0700
Section 17 ROM
Unit
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
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