DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 631
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
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17.7
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transition to these modes can be made for
the on-chip ROM area by setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory. When the program is located in
external memory, an instruction for programming the flash memory and the following instruction
should be located in on-chip RAM. The DTC should not be activated before or after the
instruction for programming the flash memory is executed.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
17.7.1
Follow the procedure shown in the program/program-verify flowchart in figure 17.15 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.
For the wait times (x, y, z1, z2, z3, α, ß, γ, ε, η, θ) after bits are set or cleared in flash memory
control register 1 (FLMCR1) and the maximum number of programming operations (N), see
section 20.3.6, Flash Memory Characteristics.
Following the elapse of (x) μs or more after the SWE bit is set to 1 in flash memory control
register 1 (FLMCR1), 128-byte program data is stored in the program data area and reprogram
data area, and the 128-byte data in the reprogram data area is written consecutively to the write
addresses. The lower 8 bits of the first address written to must be H'00 or H'80. 128 consecutive
byte data transfers are performed. The program address and program data are latched in the flash
memory. A 128-byte data transfer must be performed even if writing fewer than 128 bytes; in this
case, H'FF data must be written to the extra addresses.
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
Program Mode
P bits in FLMCR1 is executed by a program in flash memory.
executed if FWE = 0).
previously programmed addresses.
Rev.7.00 Feb. 14, 2007 page 597 of 1108
REJ09B0089-0700
Section 17 ROM
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