DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 816
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
3 643
Company:
Part Number:
DF2317VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 17 ROM
Table 17.66 AC Characteristics in Transition from Memory Read Mode to Others
Condition: V
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
Rev.7.00 Feb. 14, 2007 page 782 of 1108
REJ09B0089-0700
I/O7-0
A18-0
Figure 17.89 Timing at Transition from Memory Read Mode to Other Modes
WE
OE
CE
Note : WE and OE should not be enabled simultaneously.
CC
= 3.3 V ± 0.3 V, V
Memory Read Mode
Address Stable
SS
= 0 V, T
t
t
t
t
t
t
t
Symbol
t
nxtc
ceh
ces
dh
ds
wep
r
f
a
= 25˚C ± 5˚C
t
nxtc
Min
20
0
0
50
50
70
—
—
Other Mode Command Write
t
ces
tf
Max
—
—
—
—
—
—
30
30
t
wep
t
ds
t
ceh
tr
t
Unit
μs
ns
ns
ns
ns
ns
ns
ns
dh
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