DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 816

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 17 ROM
Table 17.66 AC Characteristics in Transition from Memory Read Mode to Others
Condition: V
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
Rev.7.00 Feb. 14, 2007 page 782 of 1108
REJ09B0089-0700
I/O7-0
A18-0
Figure 17.89 Timing at Transition from Memory Read Mode to Other Modes
WE
OE
CE
Note : WE and OE should not be enabled simultaneously.
CC
= 3.3 V ± 0.3 V, V
Memory Read Mode
Address Stable
SS
= 0 V, T
t
t
t
t
t
t
t
Symbol
t
nxtc
ceh
ces
dh
ds
wep
r
f
a
= 25˚C ± 5˚C
t
nxtc
Min
20
0
0
50
50
70
—
—
Other Mode Command Write
t
ces
tf
Max
—
—
—
—
—
—
30
30
t
wep
t
ds
t
ceh
tr
t
Unit
μs
ns
ns
ns
ns
ns
ns
ns
dh