DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 753

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Bits 2 to 0—Flash Memory Area Selection (RAM2 to RAM0): These bits are used together
with bit 3 to select the flash memory area to be overlapped with RAM (see table 17.51).
Table 17.51 Flash Memory Area Divisions
RAM Area
H'FFDC00 to H'FFEBFF
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
Block Name
RAM area, 4 kbytes
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
RAMS
1
1
1
1
1
1
1
1
0
Rev.7.00 Feb. 14, 2007 page 719 of 1108
RAM2
×
0
0
0
0
1
1
1
1
RAM1
×
0
0
1
1
0
0
1
1
REJ09B0089-0700
Section 17 ROM
×: Don’t care
RAM0
0
1
0
1
0
1
0
1
×