DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 753
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
3 643
Company:
Part Number:
DF2317VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Bits 2 to 0—Flash Memory Area Selection (RAM2 to RAM0): These bits are used together
with bit 3 to select the flash memory area to be overlapped with RAM (see table 17.51).
Table 17.51 Flash Memory Area Divisions
RAM Area
H'FFDC00 to H'FFEBFF
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
Block Name
RAM area, 4 kbytes
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
RAMS
1
1
1
1
1
1
1
1
0
Rev.7.00 Feb. 14, 2007 page 719 of 1108
RAM2
×
0
0
0
0
1
1
1
1
RAM1
×
0
0
1
1
0
0
1
1
REJ09B0089-0700
Section 17 ROM
×: Don’t care
RAM0
0
1
0
1
0
1
0
1
×
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