DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 660
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
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Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
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Company:
Part Number:
DF2317VTE25V
Manufacturer:
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Quantity:
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Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 626 of 1108
REJ09B0089-0700
φ
V
FWE
MD2 to MD0
RES
SWE bit
Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
2. See section 20.3.6, Flash Memory Characteristics.
3. Mode programming setup time t
power-off by pulling the pins up or down.
*1
Figure 17.30 Power-On/Off Timing (Boot Mode)
t
OSC1
SWE set
t
MDS
t
*2
Wait time: x
MDS
*3
MDS
*3
(min) = 200 ns
Programming/
erasing
possible
Wait time: 100 μs
Min 0 μs
SWE cleared
Min 0 μs
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