DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 660

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 626 of 1108
REJ09B0089-0700
φ
V
FWE
MD2 to MD0
RES
SWE bit
Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
2. See section 20.3.6, Flash Memory Characteristics.
3. Mode programming setup time t
power-off by pulling the pins up or down.
*1
Figure 17.30 Power-On/Off Timing (Boot Mode)
t
OSC1
SWE set
t
MDS
t
*2
Wait time: x
MDS
*3
MDS
*3
(min) = 200 ns
Programming/
erasing
possible
Wait time: 100 μs
Min 0 μs
SWE cleared
Min 0 μs