DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 206
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
3 643
Company:
Part Number:
DF2317VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 6 Bus Controller
Full access
Burst access
T
T
T
T
1
2
1
1
φ
Only lower address changed
Address bus
CS0
AS
RD
Data bus
Read data
Read data Read data
Figure 6.15 (b) Example of Burst ROM Access Timing (When AST0 = BRSTS1 = 0)
6.5.3
Wait Control
As with the basic bus interface, either program wait insertion or pin wait insertion using the WAIT
pin can be used in the initial cycle (full access) of the burst ROM interface. See section 6.4.5, Wait
Control.
Wait states cannot be inserted in a burst cycle.
Rev.7.00 Feb. 14, 2007 page 172 of 1108
REJ09B0089-0700
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