DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 206

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 6 Bus Controller
Full access
Burst access
T
T
T
T
1
2
1
1
φ
Only lower address changed
Address bus
CS0
AS
RD
Data bus
Read data
Read data Read data
Figure 6.15 (b) Example of Burst ROM Access Timing (When AST0 = BRSTS1 = 0)
6.5.3
Wait Control
As with the basic bus interface, either program wait insertion or pin wait insertion using the WAIT
pin can be used in the initial cycle (full access) of the burst ROM interface. See section 6.4.5, Wait
Control.
Wait states cannot be inserted in a burst cycle.
Rev.7.00 Feb. 14, 2007 page 172 of 1108
REJ09B0089-0700