DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 709

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Table 17.38 AC Characteristics when Entering Another Mode from Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Figure 17.53 Timing Waveforms when Entering Another Mode from Memory Read Mode
I/O
Note: Do not enable WE and OE at the same time.
A
7
18
to I/O
to A
WE
OE
CE
0
0
CC
= 3.3 V ±0.3 V, V
Memory read mode
Address stable
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
SS
= 0 V, T
a
= 25°C ±5°C
Min
20
0
0
50
50
70
—
—
t
Rev.7.00 Feb. 14, 2007 page 675 of 1108
nxtc
Other mode command write
Max
—
—
—
—
—
—
30
30
t
ces
t
f
t
wep
t
ds
REJ09B0089-0700
Unit
μs
ns
ns
ns
ns
ns
ns
ns
Section 17 ROM
t
ceh
t
r
t
dh