DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 1022
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
3 643
Company:
Part Number:
DF2317VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Appendix B Internal I/O Registers
BCRH—Bus Control Register H
Rev.7.00 Feb. 14, 2007 page 988 of 1108
REJ09B0089-0700
Bit
Initial value
Read/Write
:
:
:
Idle Cycle Insert 1
0
1
ICIS1
R/W
7
1
Idle cycle not inserted in case of successive external read cycles in different areas
Idle cycle inserted in case of successive external read cycles in different areas
Idle Cycle Insert 0
0
1
ICIS0
R/W
Idle cycle not inserted in case of successive external read and external write cycles
Idle cycle inserted in case of successive external read and external write cycles
6
1
Area 0 Burst ROM Enable
0
1
BRSTRM
R/W
Basic bus interface
Burst ROM interface
5
0
Burst Cycle Select 1
0
1
BRSTS1
R/W
Burst cycle comprises 1 state
Burst cycle comprises 2 states
4
1
Burst Cycle Select 0
0
1
BRSTS0
R/W
Max. 4 words in burst access
Max. 8 words in burst access
3
0
Only 0 should be written to these bits
H'FED4
R/W
⎯
2
0
Reserved
R/W
⎯
1
0
Bus Controller
R/W
⎯
0
0
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