DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 607

MCU 3V 128K 100-TQFP

DF2317VTE25

Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2317VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25

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17.4.3
Mode Transitions: When the mode pins and the FWE pin are set in the reset state and a reset-
start is executed, the chip enters one of the operating modes shown in figure 17.3. In user mode,
flash memory can be read but not programmed or erased.
Flash memory can be programmed and erased in boot mode, user program mode, and programmer
mode.
Notes: Only make a transition between user mode and user program mode when the CPU is
FWE = 1,
SWE = 1
(on-chip ROM
User mode
enabled)
Flash Memory Operating Modes
not accessing the flash memory.
* MD2 = MD1 = MD0 = 0, PF2 = 1, PF1 = PF0 = 0
On-board programming mode
program mode
FWE = 0
or SWE = 0
User
Figure 17.3 Flash Memory Mode Transitions
MD1 = 1,
MD2 = 1,
FWE = 0
RES = 0
RES = 0
FWE = 1,
MD1 = 1,
MD2 = 0
Reset state
Boot mode
Rev.7.00 Feb. 14, 2007 page 573 of 1108
RES = 0
*
RES = 0
Programmer mode
REJ09B0089-0700
Section 17 ROM

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