DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 208

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 6 Bus Controller
Write after Read: If an external write occurs after an external read while the ICIS0 bit in BCRH
is set to 1, an idle cycle is inserted at the start of the write cycle.
Figure 6.17 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle from ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a collision occurs in cycle B between the read data from ROM and
the CPU write data. In (b), an idle cycle is inserted, and a data collision is prevented.
Rev.7.00 Feb. 14, 2007 page 174 of 1108
REJ09B0089-0700
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
(a) Idle cycle not inserted
T
1
Bus cycle A
(ICIS0 = 0)
T
Figure 6.17 Example of Idle Cycle Operation (2)
2
T
floating time
Long output
3
Bus cycle B
T
1
T
2
Data
collision
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
T
(b) Idle cycle inserted
1
Bus cycle A
(ICIS0 = 1 (initial value))
T
2
T
3
T
I
Bus cycle B
T
1
T
2