DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 208
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
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Section 6 Bus Controller
Write after Read: If an external write occurs after an external read while the ICIS0 bit in BCRH
is set to 1, an idle cycle is inserted at the start of the write cycle.
Figure 6.17 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle from ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a collision occurs in cycle B between the read data from ROM and
the CPU write data. In (b), an idle cycle is inserted, and a data collision is prevented.
Rev.7.00 Feb. 14, 2007 page 174 of 1108
REJ09B0089-0700
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
(a) Idle cycle not inserted
T
1
Bus cycle A
(ICIS0 = 0)
T
Figure 6.17 Example of Idle Cycle Operation (2)
2
T
floating time
Long output
3
Bus cycle B
T
1
T
2
Data
collision
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
T
(b) Idle cycle inserted
1
Bus cycle A
(ICIS0 = 1 (initial value))
T
2
T
3
T
I
Bus cycle B
T
1
T
2
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