DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 605

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

17.4
17.4.1
The H8S/2318 F-ZTAT, H8S/2317 F-ZTAT, H8S/2315 F-ZTAT, and H8S/2314 F-ZTAT have
384, 256, 128 kbytes of on-chip flash memory. The features of the flash memory are summarized
below.
• Four flash memory operating modes
• Programming/erase methods
• Programming/erase times
• Reprogramming capability
• On-board programming modes
• Automatic bit rate adjustment
• Flash memory emulation by RAM *
• Protect modes
⎯ Program mode
⎯ Erase mode
⎯ Program-verify mode
⎯ Erase-verify mode
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in
single-block units). To erase the entire flash memory, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 4-kbyte, 32-kbyte, and 64-kbyte
blocks.
The flash memory programming time is 10.0 ms (typ.) for simultaneous 128-byte
programming, equivalent to 78 μs (typ.) per byte, and the erase time is 50 ms (typ.).
The flash memory can be reprogrammed a minimum of 100 times.
There are two modes in which flash memory can be programmed/erased/verified on-board:
⎯ Boot mode
⎯ User program mode
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match
the transfer bit rate of the host.
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase/verify operations.
Features
Overview of Flash Memory (H8S/2318 F-ZTAT, H8S/2317 F-ZTAT,
H8S/2315 F-ZTAT, H8S/2314 F-ZTAT)
Rev.7.00 Feb. 14, 2007 page 571 of 1108
REJ09B0089-0700
Section 17 ROM