DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 758

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 17 ROM
17.24.2 User Program Mode
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The programming/erasing overview flow is shown in figure 17.68.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset or hardware standby must not be executed. Doing so may cause
damage or destroy flash memory. If reset is executed accidentally, reset must be released after the
reset input period, which is longer than normal 100 μs.
For information on the programming procedure refer to "Programming Procedure in User Program
Mode", and for information on the erasing procedure refer to "Erasing Procedure in User Program
Mode", below.
For the overview of a processing that repeats erasing and programming by downloading the
programming program and the erasing program in separate on-chip ROM areas using FTDAR, see
"Erasing and Programming Procedure in User Program Mode" which appears later in this section.
Rev.7.00 Feb. 14, 2007 page 724 of 1108
REJ09B0089-0700
program data is prepared
transferred to the on-chip
Programming/erasing
Programming/erasing
When programming,
Programming/erasing
procedure program is
RAM and executed
start
end
Figure 17.68 Programming/Erasing Overview Flow
[1] RAM emulation mode must be canceled
[2] When the program data is made by means
[3] Programming/erasing is executed only in
[4] After programming/erasing is finished, the FWE
in advance. Download cannot be executed
in emulation mode.
of emulation, use the FTDAR register to change
the download destination. Note that the download
area and the emulation area will overlap if FTDAR
is in its initial status (H'02).
the on-chip RAM. However, if program data
is in a consecutive area and can be accessed
by the MOV.B instruction of the CPU like
SRAM/ROM, the program data can be in an
external space.
pin must be protected.