DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 662

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 628 of 1108
REJ09B0089-0700
φ
V
FWE
MD2 to MD0
RES
SWE bit
Notes: 1. When entering boot mode or making a transition from boot mode to another mode, mode switching must be
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations prohibited)
2. When making a transition from boot mode to another mode, a mode programming setup time t
3. See section 20.3.6, Flash Memory Characteristics.
carried out by means of RES input. The state of ports with multiplexed address functions and bus control
output pins (AS, RD, WR) will change during this switchover interval (the interv al during which the RES pin
input is low), and therefore these pins should not be used as output signals during this time.
ns is necessary with respect to RES clearance timing.
(Example: Boot Mode → User Mode ↔ User Program Mode)
t
OSC1
Mode
change
SWE
set
t
MDS
t
MDS
*1
Figure 17.32 Mode Transition Timing
Boot
mode
*3
SWE
cleared
Mode
change
t
RESW
Min 0 μs
t
MDS
*1
*2
User
mode
User program mode
User
mode
User program
mode
MDS
(min) of 200