DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 708

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Section 17 ROM
Table 17.37 AC Characteristics in Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Rev.7.00 Feb. 14, 2007 page 674 of 1108
REJ09B0089-0700
A
Note: Data is latched at the rising edge of WE.
18
to A
Data
WE
OE
CE
Figure 17.52 Memory Read Mode Timing Waveforms after Command Write
0
CC
= 3.3 V ±0.3 V, V
t
ces
Command write
t
f
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
t
wep
t
SS
ds
H'00
= 0 V, T
t
dh
t
t
ceh
r
a
= 25°C ±5°C
Min
20
0
0
50
50
70
—
—
t
nxtc
Max
—
—
—
—
—
—
30
30
Memory read mode
Address stable
Data
Unit
μs
ns
ns
ns
ns
ns
ns
ns