DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 713

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

17.20.6 Auto-Erase Mode
• Auto-erase mode supports only total memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O
• Status polling I/O
AC Characteristics
Table 17.41 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
be used for this purpose (the I/O
operation).
as the next command write has not been performed, reading is possible by enabling CE and
OE.
CC
= 3.3 V ±0.3 V, V
6
and I/O
7
Symbol
t
t
t
t
t
t
t
t
t
t
t
pin information is retained until the next command write. As long
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
SS
7
status polling pin is used to identify the end of an auto-erase
= 0 V, T
a
= 25°C ±5°C
Min
20
0
0
50
50
70
1
—
100
—
—
Rev.7.00 Feb. 14, 2007 page 679 of 1108
6
. Alternatively, status read mode can also
Max
—
—
—
—
—
—
—
150
40000
30
30
REJ09B0089-0700
Unit
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
Section 17 ROM