DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 104
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
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Section 2 CPU
2.9.4
The external address space is accessed with an 8-bit or 16-bit data bus width in a two-state or
three-state bus cycle. In three-state access, wait states can be inserted. For further details, refer to
section 6, Bus Controller.
2.10
2.10.1
Only register ER0, ER1, ER4, or ER5 should be used when using the TAS instruction. The TAS
instruction is not generated by the Renesas H8S and H8/300 Series C/C++ compilers. If the TAS
instruction is used as a user-defined intrinsic function, ensure that only register ER0, ER1, ER4, or
ER5 is used.
Rev.7.00 Feb. 14, 2007 page 70 of 1108
REJ09B0089-0700
External Address Space Access Timing
Usage Note
TAS Instruction
φ
Address bus
AS
RD
HWR, LWR
Data bus
Figure 2.17 Pin States during On-Chip Supporting Module Access
T
High-impedance state
1
Unchanged
Bus cycle
High
High
High
T
2
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